The FDL100N50F is an N-channel MOSFET from Win Source Electronics, designed for high voltage applications with a maximum drain-to-source voltage of 500V and a continuous drain current rating of 100A at 25¬8C. It features a low on-state resistance of 43 mOc at a gate-source voltage of 10V and a drain current of 50A, which contributes to improved efficiency in power conversion applications. The device is capable of handling a single pulsed avalanche energy of up to 5000mJ, making it suitable for demanding environments. This MOSFET has enhanced reverse recovery characteristics, with a reverse recovery time of less than 100ns and a dv/dt capability of 15V/ns, which can reduce the need for additional components in certain designs. It is compliant with RoHS standards and operates within a temperature range of -55¬8C to +150¬8C. The FDL100N50F is packaged in a TO-264 case, facilitating through-hole mounting. It is suitable for applications such as uninterruptible power supplies and AC-DC power supplies, making it a versatile choice for engineers looking for reliable high-voltage switching solutions.
MOSFET N-Ch 500V 100A UniFET TO264AA
MOSFET N-Ch 500V 100A UniFET TO264AA
MOSFET N-CH 500V 100A TO264-3
N-Channel 500V 100A (Tc) 2500W (Tc) Through Hole TO-264-3
MOSFETs UniFET 500V Product overview: FDL100N50F from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDL100N50F can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038169-FDL100N50F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2500W (Tc)
Family Name: FDL100N50F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 238nC @ 10V
Max Input Capacitance: 12000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): IXFB100N50Q3; IXFB132N50P3; IXFB120N50P2; IXFB72N55Q2;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Quantity per package: 375
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 500V 100A TO264-3
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 7599128P | 1241331 | FDL100N50F | FDL100N50F-ND | 2088-FDL100N50F | 1038169-FDL100N50F | 31Y1379 | FDL100N50F | FDL100N50F |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 500V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDL100N50F | Mosfet, N-Ch, 500V, 100A, To-264Aa-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | TO-264 | To-264 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | Tube | SOT3; TO-264 | TO-3 | TO-264-3, TO-264AA | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Number of units in IC | 1 | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
