onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDJ1032C FDJ1032C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066969-FDJ1032C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC75-6 FLMP Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A, 2.8A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3nC @ 4.5V Max Input Capacitance: 200pF @ 10V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066969-FDJ1032C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC75-6 FLMP Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A, 2.8A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3nC @ 4.5V Max Input Capacitance: 200pF @ 10V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDJ1032C - 066969-FDJ1032C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDJ1032C
066969-FDJ1032C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDJ1032C 066969-FDJ1032C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066969-FDJ1032C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC75-6 FLMP Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A, 2.8A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3nC @ 4.5V Max Input Capacitance: 200pF @ 10V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066969-FDJ1032C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC75-6 FLMP
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A, 2.8A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 200pF @ 10V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - FDJ1032C-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDJ1032C-ND
FET, MOSFET Arrays FDJ1032C-ND
Mosfet Array N and P-Channel 20V 3.2A, 2.8A 900mW Surface Mount SC75-6 FLMP

Mosfet Array N and P-Channel 20V 3.2A, 2.8A 900mW Surface Mount SC75-6 FLMP

Buy Now Datasheet
Singapore
P-Channel 20V 3.2A MOSFET Transistor
289-FDJ1032C
P-Channel 20V 3.2A MOSFET Transistor 289-FDJ1032C
N/P-Channel JFET, 20V, 3.2A, 90mΩ Rds On, SC Package Product overview: FDJ1032C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDJ1032C can be used for catalog matching and distributor lookup.

N/P-Channel JFET, 20V, 3.2A, 90mΩ Rds On, SC Package Product overview: FDJ1032C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDJ1032C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDJ1032C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDJ1032C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDJ1032C
MOSFET N/P-CH 20V 3.2A SC75-6

MOSFET N/P-CH 20V 3.2A SC75-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066969-FDJ1032C FDJ1032C-ND 289-FDJ1032C FDJ1032C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDJ1032C FET, MOSFET Arrays P-Channel 20V 3.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
V(BR)DSS 20 volts
PD 900 milliwatts 900 milliwatts
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