Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066964-FDI038AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 124nC @ 10V
Max Input Capacitance: 6400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
MOSFET N-CH 60V 17A/80A I2PAK Product overview: FDI038AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 17A, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 17A, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDI038AN06A0 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 17A/80A I2PAK
MOSFET, N-CH, 60V, 80A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3PinsRoHS Compliant: Yes
MOSFET 60V 80a 0.0038 Ohms/VGS=10V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 066964-FDI038AN06A0 | FDI038AN06A0-ND | 278-FDI038AN06A0 | FDI038AN06A0 | 28H9684 | FDI038AN06A0 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI038AN06A0 | Single FETs, MOSFETs | 60V 17A 80A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 80A, I2Pak; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | |||||
| PD | 310000 milliwatts | 310000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
