Manufacturer: ON Semiconductor
Win Source Part Number: 811846-FDH5500
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55V
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 300
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 7mOhm at 75A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 268nC at 20V
Input Capacitance (Ciss) (Maximum) at Vds: 3565pF at 25V
Current - Continuous Drain (Id) at 25°C: 75A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±30V
N-Channel 55V 75A (Tc) 375W (Tc) Through Hole TO-247-3
MOSFET N-CH 55V 75A TO247-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | 811846-FDH5500 | FDH5500-ND | FDH5500 |
| Product Name | FETs - Single - FDH5500 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |
| QG | 268 nC | ||
| PD | 375000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |