MOSFET N-CH 500V 45A TO-247 Product overview: FDH45N50F_F133 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 45A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDH45N50F_F133 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038160-FDH45N50F_F1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 137nC @ 10V
Max Input Capacitance: 6630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 120 mOhm @ 22.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-FDH45N50F_F133 | FDH45N50F_F133 | 1038160-FDH45N50F_F133 |
| Product Name | 500V 45A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH45N50F_F133 | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel |
| PD | 625000 milliwatts | 625000 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tube/Rail | TO-247; TO-247AD | TO-247; SOT3; TO-247-3 |