onsemi 500V 45A MOSFET Transistor FDH45N50F_F133

Description
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Description
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDH45N50F_F133 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Supplier's Site Datasheet
Singapore
500V 45A MOSFET Transistor
285-FDH45N50F_F133
500V 45A MOSFET Transistor 285-FDH45N50F_F133
MOSFET N-CH 500V 45A TO-247 Product overview: FDH45N50F_F133 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 45A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDH45N50F_F133 can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 45A TO-247 Product overview: FDH45N50F_F133 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 45A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDH45N50F_F133 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH45N50F_F133 - 1038160-FDH45N50F_F133 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH45N50F_F133
1038160-FDH45N50F_F133
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH45N50F_F133 1038160-FDH45N50F_F133
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038160-FDH45N50F_F1 33 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 45A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 137nC @ 10V Max Input Capacitance: 6630pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 120 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038160-FDH45N50F_F133
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 137nC @ 10V
Max Input Capacitance: 6630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 120 mOhm @ 22.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDH45N50F_F133 285-FDH45N50F_F133 1038160-FDH45N50F_F133
Product Name 500V 45A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH45N50F_F133
Polarity N-Channel N-Channel N-Channel; N-Channel
rDS(on) 0.1200 ohms
Package Type TO-247; TO-247AD Tube/Rail TO-247; SOT3; TO-247-3
PD 625000 milliwatts 625000 milliwatts
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