onsemi Single FETs, MOSFETs FDH210N08

N-Channel 75V 210A (Tc) 462W (Tc) Through Hole TO-247-3

Power Field-Effect Transistor, 210A, 75V, 0.0055ohm, N-Channel, MOSFET, TO-247AB

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038156-FDH210N08
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 462W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 75V
Maximum Gate-Source Voltage: ±20V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Power MOSFET, N-Channel, UniFETTM, 75 V, 210 A, 5.5 mΩ, TO-247, 450-TUBE Product overview: FDH210N08 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75 V, 210 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75 V, 210 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDH210N08 can be used for catalog matching and distributor lookup.