onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH038AN08A1 FDH038AN08A1

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066959-FDH038AN08A1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 8665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH038AN08A1 - 066959-FDH038AN08A1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDH038AN08A1-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 75V, 80A, To-247; Channel Type Onsemi - 84H4564 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDH038AN08A1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO - 598-FDH038AN08A1 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066959-FDH038AN08A1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 8665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH038AN08A1 - 066959-FDH038AN08A1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH038AN08A1
066959-FDH038AN08A1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH038AN08A1 066959-FDH038AN08A1
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066959-FDH038AN08A1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 8665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066959-FDH038AN08A1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 450W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 8665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDH038AN08A1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDH038AN08A1-ND
Single FETs, MOSFETs FDH038AN08A1-ND
N-Channel 75V 22A (Ta), 80A (Tc) 450W (Tc) Through Hole TO-247-3

N-Channel 75V 22A (Ta), 80A (Tc) 450W (Tc) Through Hole TO-247-3

Buy Now Datasheet
N Channel Mosfet, 75V, 80A, To-247; Channel Type Onsemi - 84H4564 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 75V, 80A, To-247; Channel Type Onsemi
84H4564
N Channel Mosfet, 75V, 80A, To-247; Channel Type Onsemi 84H4564
N CHANNEL MOSFET, 75V, 80A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 75V, 80A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDH038AN08A1
MOSFET FDH038AN08A1
MOSFET N-Ch PowerTrench

MOSFET N-Ch PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDH038AN08A1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDH038AN08A1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDH038AN08A1
MOSFET N-CH 75V 22A/80A TO247-3

MOSFET N-CH 75V 22A/80A TO247-3

Supplier's Site
N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO - 598-FDH038AN08A1 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO
598-FDH038AN08A1
N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO 598-FDH038AN08A1
N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO

N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066959-FDH038AN08A1 FDH038AN08A1-ND 84H4564 FDH038AN08A1 FDH038AN08A1 598-FDH038AN08A1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDH038AN08A1 Single FETs, MOSFETs N Channel Mosfet, 75V, 80A, To-247; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 75 volts 75 volts
PD 450000 milliwatts 450000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
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