MOSFETs FDG6335N Product overview: FDG6335N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDG6335N can be used for catalog matching and distributor lookup.
N-CHANNEL POWERTRENCH MOSFET, 20
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015995-FDG6335N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6335N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 700mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.4nC @ 4.5V
Max Input Capacitance: 113pF @ 10V
Maximum Rds On at Id,Vgs: 300 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): BSD235NL6327ZT; BSD235NL6327; BSD235N H6327; BSD235NL6327XT;
Introduction Date: October 01, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Dual MOSFET, Dual N Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 700mA, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes
MOSFET, N CHANNEL, 20V, 0.7A, SC-70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 20V 0.7A SC88
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDG6335N | FDG6335N | 015995-FDG6335N | FDG6335NTR-ND | 31Y1374 | 58K1457 | FDG6335N | FDG6335N |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N | FET, MOSFET Arrays | Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi | Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0028 kS | |||||||
| PD | 300 milliwatts | 300 milliwatts | ||||||
| Package Type | Reel | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 | 6-TSSOP, SC-88, SOT-363 | TO-3 | TO-3 |
