onsemi FET, MOSFET Arrays FDG6335N

Description
Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Surface Mount SC-88 (SC-70-6)
  • FET, MOSFET Arrays - FDG6335NTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N - 015995-FDG6335N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDG6335N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG6335N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi - 31Y1374 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi - 58K1457 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 20V, 0.7A, Sc-70-6; Transistor Polarity Onsemi - 29X6689 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDG6335NTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6335NTR-ND
FET, MOSFET Arrays FDG6335NTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N - 015995-FDG6335N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N
015995-FDG6335N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N 015995-FDG6335N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015995-FDG6335N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDG6335N Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 700mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.4nC @ 4.5V Max Input Capacitance: 113pF @ 10V Maximum Rds On at Id,Vgs: 300 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): BSD235NL6327ZT; BSD235NL6327; BSD235N H6327; BSD235NL6327XT; Introduction Date: October 01, 2001 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015995-FDG6335N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6335N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 700mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.4nC @ 4.5V
Max Input Capacitance: 113pF @ 10V
Maximum Rds On at Id,Vgs: 300 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): BSD235NL6327ZT; BSD235NL6327; BSD235N H6327; BSD235NL6327XT;
Introduction Date: October 01, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDG6335N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDG6335N
Single FETs, MOSFETs FDG6335N
N-CHANNEL POWERTRENCH MOSFET, 20

N-CHANNEL POWERTRENCH MOSFET, 20

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG6335N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG6335N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG6335N
MOSFET 2N-CH 20V 0.7A SC88

MOSFET 2N-CH 20V 0.7A SC88

Supplier's Site
Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi - 31Y1374 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi
31Y1374
Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi 31Y1374
Dual MOSFET, Dual N Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V RoHS Compliant: Yes

Dual MOSFET, Dual N Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi - 58K1457 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi
58K1457
Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi 58K1457
DUAL N CHANNEL MOSFET, 20V, 700mA, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 20V, 700mA, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 20V, 0.7A, Sc-70-6; Transistor Polarity Onsemi - 29X6689 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 0.7A, Sc-70-6; Transistor Polarity Onsemi
29X6689
Mosfet, N Channel, 20V, 0.7A, Sc-70-6; Transistor Polarity Onsemi 29X6689
MOSFET, N CHANNEL, 20V, 0.7A, SC-70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 0.7A, SC-70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDG6335N
MOSFET FDG6335N
MOSFET FDG6335N

MOSFET FDG6335N

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDG6335NTR-ND 015995-FDG6335N FDG6335N FDG6335N 31Y1374 58K1457 FDG6335N
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi MOSFET
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363 TO-3 TO-3
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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