Mosfet Array 2 N-Channel (Dual) 20V 700mA 300mW Surface Mount SC-88 (SC-70-6)
N-CHANNEL POWERTRENCH MOSFET, 20
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015995-FDG6335N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6335N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 700mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.4nC @ 4.5V
Max Input Capacitance: 113pF @ 10V
Maximum Rds On at Id,Vgs: 300 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): BSD235NL6327ZT; BSD235NL6327; BSD235N H6327; BSD235NL6327XT;
Introduction Date: October 01, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 2N-CH 20V 0.7A SC88
Dual MOSFET, Dual N Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 700mA, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5VRoHS Compliant: Yes
MOSFET, N CHANNEL, 20V, 0.7A, SC-70-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDG6335NTR-ND | FDG6335N | 015995-FDG6335N | FDG6335N | FDG6335N | 31Y1374 | 58K1457 |
| Product Name | FET, MOSFET Arrays | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6335N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual Mosfet, Dual N Channel, 700 Ma, 20 V, 0.18 Ohm, 4.5 V, 1.1 V Rohs Compliant Onsemi | Dual N Channel Mosfet, 20V, 700Ma, Sc-70; Transistor Polarity Onsemi |
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 | TO-3 | TO-3 | ||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 700 milliamps | 700 milliamps |