Mosfet Array N and P-Channel 20V 700mA, 600mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array N and P-Channel 20V 700mA, 600mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array N and P-Channel 20V 700mA, 600mA 300mW Surface Mount SC-88 (SC-70-6)
MOSFET N/P-CH 20V SC70-6
MOSFETs 20V N&P-Channel Power Trench Product overview: FDG6332C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDG6332C can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015994-FDG6332C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDG6332C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 700mA, 600mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.5nC @ 4.5V
Max Input Capacitance: 113pF @ 10V
Maximum Rds On at Id,Vgs: 300 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): FDG6332C_F085; FDG6332C_NF40;
Introduction Date: September 01, 2003
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
DUAL N/P CHANNEL MOSFET, 20V, SC-70; Transistor Polarity:Complementa
MOSFET, FULL REEL; Transistor Polarity:Complementa
MOSFET N/P-CH 20V 0.7A SC88
MOSFET 20V N&P-Channel Power Trench
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDG6332CDKR-ND | FDG6332C | 2088-FDG6332C | 015994-FDG6332C | 82C2485 | 67R2051 | FDG6332C | FDG6332C |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | P-Channel 20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6332C | Dual N/p Channel Mosfet, 20V, Sc-70; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | Reel | SOT3; SC-70-6 | TO-3 | TO-3 | ||
| Polarity | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 700 milliamps | 700 milliamps | 700 milliamps |