onsemi Single FETs, MOSFETs FDFS2P753Z

P-Channel 30V 3A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

P-Channel MOSFET, -30V, -3A, 115mR, SOIC, SMT Product overview: FDFS2P753Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, -3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFS2P753Z can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 3A 8SOIC

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015974-FDFS2P753Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDFS2P753Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.3nC @ 10V
Max Input Capacitance: 455pF @ 10V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 115 mOhm @ 3A, 10V
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: China, United States of America
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500