onsemi Single FETs, MOSFETs FDFME3N311ZT

Description
N-Channel 30V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
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Description
N-Channel 30V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDFME3N311ZTTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDFME3N311ZTTR-ND
Single FETs, MOSFETs FDFME3N311ZTTR-ND
N-Channel 30V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)

N-Channel 30V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)

Buy Now Datasheet
MOSFET Transistor 2088-FDFME3N311ZT
MOSFETs Int. NCh PowerTrench MOSFET & Sch. Diode Product overview: FDFME3N311ZT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDFME3N311ZT can be used for catalog matching and distributor lookup.

MOSFETs Int. NCh PowerTrench MOSFET & Sch. Diode Product overview: FDFME3N311ZT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDFME3N311ZT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFME3N311ZT - 103364-FDFME3N311ZT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFME3N311ZT
103364-FDFME3N311ZT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFME3N311ZT 103364-FDFME3N311ZT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 103364-FDFME3N311ZT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (1.6x1.6) Dimension: 6-UFDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.4nC @ 4.5V Max Input Capacitance: 75pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 299 mOhm @ 1.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 5k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 103364-FDFME3N311ZT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (1.6x1.6)
Dimension: 6-UFDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.4nC @ 4.5V
Max Input Capacitance: 75pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 299 mOhm @ 1.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 5k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFME3N311ZT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFME3N311ZT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFME3N311ZT
MOSFET N-CH 30V 1.8A 6MICROFET

MOSFET N-CH 30V 1.8A 6MICROFET

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDFME3N311ZTTR-ND 2088-FDFME3N311ZT 103364-FDFME3N311ZT FDFME3N311ZT
Product Name Single FETs, MOSFETs MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFME3N311ZT Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type 6-UFDFN Exposed Pad Reel SOT3; 6-MicroFET (1.6x1.6) 1.4 nC @ 4.5 V
MOSFET Operating Mode Enhancement
Transconductance 0.0028 kS
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