P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2)
MOSFET P-CH 20V 3A 6MICROFET
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015971-FDFMA2P857
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 435pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET P-CH 20V 3A 6MICROFET
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDFMA2P857TR-ND | FDFMA2P857 | 015971-FDFMA2P857 | FDFMA2P857 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P857 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |
| Package Type | 6-VDFN Exposed Pad | 6-VDFN Exposed Pad | SOT3; 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 20 volts | 20 volts |
