P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel JFET, -20V, 3A, 120mR, Surface Mount Product overview: FDFMA2P853 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFMA2P853 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015970-FDFMA2P853
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 435pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET, P-CH, -20V, -3A, WDFN; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power RoHS Compliant: Yes
MOSFET P-CH 20V 3A 6MICROFET
MOSFET MLP 2X2 DUAL INTEGRATED PCH PO
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDFMA2P853FSTR-ND | 278-FDFMA2P853 | 015970-FDFMA2P853 | 46AC8816 | FDFMA2P853 | FDFMA2P853 |
| Product Name | Single FETs, MOSFETs | P-Channel SMD -20V 3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P853 | Mosfet, P-Ch, -20V, -3A, Wdfn; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | 6-VDFN Exposed Pad | SOT3; 6-MicroFET (2x2) | TO-3 | 6-VDFN Exposed Pad | ||
| PD | 700 milliwatts | 1400 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
