Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066950-FDD8878
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 880pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 35A, 30V, 0.0185ohm, N-Channel, MOSFET, TO-252AA
30V 40A N-Ch MOSFET 15mR DPAK SM Product overview: FDD8878 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8878 can be used for catalog matching and distributor lookup.
N-Channel 30V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA
MOSFET N-CH 30V 11A/40A TO252AA
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 30V, 0.0185OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CHANNEL, 30V, 0.011OHM, 40A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:40W RoHS Compliant: Yes
| Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 066950-FDD8878 | FDD8878 | 278-FDD8878 | FDD8878TR-ND | FDD8878 | FDD8878 | 49253899 | 84W8855 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8878 | 30V 40A DPAK MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, N Channel, 30V, 0.011Ohm, 40A, To-252Aa-3; Channel Type Onsemi | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | |||||||
| PD | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
