Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015960-FDD8778
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 845pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
N-Channel 25V 35A (Tc) 39W (Tc) Surface Mount TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 3
N CHANNEL MOSFET, 25V, 35A TO-252AA; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET 25V N-Channel PowerTrench MOSFET
MOSFET N-CH 25V 35A TO252AA
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 015960-FDD8778 | FDD8778TR-ND | FDD8778 | 67P3472 | FDD8778 | FDD8778 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8778 | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 25V, 35A To-252Aa; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | ||||
| PD | 39000 milliwatts | 39000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
