MOSFET N-CH 80V 100A DPAK
N-Channel 80V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252)
N-Channel 80V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252)
N-Channel 80V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252)
FDD86367 - N-Channel PowerTrench MOSFET 80 V, 100 A
MOSFETs MV7 80/20V 1000A N-chanPwrTrnchMOSFET
Manufacturer: ON Semiconductor
Win Source Part Number: 871631-FDD86367
Series: Automotive, AEC-Q101, PowerTrench®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: FDD863
Categories: Discrete Semiconductor Products
Case / Package: D-PAK (TO-252)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 38 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FDD86367-ND, FDD86367OSCT, FDD86367OSDKR, FDD86367OSTR
MOSFET N-CH 80V 100A DPAK
MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET
| ODG (Origin Data Global) | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD86367 | FDD86367OSTR-ND | FDD86367 | 2088-FDD86367 | 871631-FDD86367 | FDD86367 | FDD86367 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 20V 1000A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86367 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 80 volts | ||||||
| IDSS | 100000 milliamps | ||||||
| PD | 227000 milliwatts | 227 milliwatts |