onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 FDD8444

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040257-FDD8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 153W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 145A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 116nC @ 10V Max Input Capacitance: 6195pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 - 040257-FDD8444 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD8444TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD8444DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD8444CT-ND - DigiKey
    DigiKey
  • FDD8444 - Rochester Electronics
    Rochester Electronics
  • Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi - 85W3139 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD8444 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040257-FDD8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 153W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 145A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 116nC @ 10V Max Input Capacitance: 6195pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 - 040257-FDD8444 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444
040257-FDD8444
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 040257-FDD8444
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040257-FDD8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 153W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 145A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 116nC @ 10V Max Input Capacitance: 6195pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040257-FDD8444
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 153W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 145A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 6195pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD8444TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8444TR-ND
Single FETs, MOSFETs FDD8444TR-ND
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD8444DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8444DKR-ND
Single FETs, MOSFETs FDD8444DKR-ND
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD8444CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8444CT-ND
Single FETs, MOSFETs FDD8444CT-ND
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
- FDD8444 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDD8444
FDD8444
Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Supplier's Site Datasheet
Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi - 85W3139 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi
85W3139
Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi 85W3139
MOSFET, N CHANNEL, 40V, 0.004OHM, 145A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:145A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:153W RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 0.004OHM, 145A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:145A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:153W RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD8444
MOSFET FDD8444
MOSFET LOW VOLTAGE

MOSFET LOW VOLTAGE

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD8444 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD8444
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD8444
MOSFET N-CH 40V 145A TO252AA

MOSFET N-CH 40V 145A TO252AA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 040257-FDD8444 FDD8444TR-ND FDD8444 85W3139 FDD8444 FDD8444
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 Single FETs, MOSFETs Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 153000 milliwatts 153000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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