onsemi Single FETs, MOSFETs FDD8444

Description
Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDD8444 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD8444TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8444TR-ND
Single FETs, MOSFETs FDD8444TR-ND
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD8444DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8444DKR-ND
Single FETs, MOSFETs FDD8444DKR-ND
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD8444CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8444CT-ND
Single FETs, MOSFETs FDD8444CT-ND
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 - 040257-FDD8444 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444
040257-FDD8444
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 040257-FDD8444
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040257-FDD8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 153W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 145A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 116nC @ 10V Max Input Capacitance: 6195pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040257-FDD8444
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 153W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 145A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 6195pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi - 85W3139 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi
85W3139
Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi 85W3139
MOSFET, N CHANNEL, 40V, 0.004OHM, 145A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:145A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:153W RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 0.004OHM, 145A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:145A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:153W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDD8444
MOSFET FDD8444
MOSFET LOW VOLTAGE

MOSFET LOW VOLTAGE

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD8444 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD8444
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD8444
MOSFET N-CH 40V 145A TO252AA

MOSFET N-CH 40V 145A TO252AA

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD8444 FDD8444TR-ND 040257-FDD8444 85W3139 FDD8444 FDD8444
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
rDS(on) 5.2 ohms
Package Type DPAK-JDEC TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252AA TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data