N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FDD8444 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8444 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040257-FDD8444
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 153W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 145A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 6195pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET, N CHANNEL, 40V, 0.004OHM, 145A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:145A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:153W RoHS Compliant: Yes
MOSFET N-CH 40V 145A TO252AA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD8444TR-ND | 278-FDD8444 | FDD8444 | 040257-FDD8444 | FDD8444 | 85W3139 | FDD8444 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 | MOSFET | Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | DPAK-JDEC | SOT3; TO-252 (DPAK); TO-252AA | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 153 milliwatts | 153000 milliwatts | 153000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
