Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040257-FDD8444
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 153W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 145A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 6195pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA
N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA
MOSFET, N CHANNEL, 40V, 0.004OHM, 145A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:145A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:153W RoHS Compliant: Yes
MOSFET N-CH 40V 145A TO252AA
| Win Source Electronics | Rochester Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 040257-FDD8444 | FDD8444 | FDD8444TR-ND | 85W3139 | FDD8444 | FDD8444 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8444 | Single FETs, MOSFETs | Mosfet, N Channel, 40V, 0.004Ohm, 145A, To-252-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | |||||
| PD | 153000 milliwatts | 153000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) |
