onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6778A FDD6778A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121414-FDD6778A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 12A (Ta), 10A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 870pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121414-FDD6778A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 12A (Ta), 10A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 870pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6778A - 121414-FDD6778A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6778A
121414-FDD6778A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6778A 121414-FDD6778A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121414-FDD6778A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 12A (Ta), 10A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 870pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 121414-FDD6778A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 24W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 12A (Ta), 10A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 870pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6778A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6778A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6778A
MOSFET N-CH 25V 12A/10A DPAK

MOSFET N-CH 25V 12A/10A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 121414-FDD6778A FDD6778A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6778A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 3700 to 24000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2903ZS - 862655-AUIRF2903ZS - Win Source Electronics
Specs
Polarity N-Channel
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK
View Details
3 suppliers
Single FETs, MOSFETs - UJ3C120070K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
3 suppliers