onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6776A FDD6776A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118823-FDD6776A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 17.7A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1490pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 17.7A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118823-FDD6776A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 17.7A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1490pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 17.7A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6776A - 118823-FDD6776A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6776A
118823-FDD6776A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6776A 118823-FDD6776A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118823-FDD6776A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 17.7A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1490pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 17.7A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 118823-FDD6776A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 17.7A (Ta), 30A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1490pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 17.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6776A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6776A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6776A
MOSFET N-CH 25V 17.7A/30A DPAK

MOSFET N-CH 25V 17.7A/30A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 118823-FDD6776A FDD6776A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6776A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 3700 to 39000 milliwatts
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