onsemi 30V 13A MOSFET Transistor FDD6696

MOSFET N-CH 30V 13A D-PAK Product overview: FDD6696 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6696 can be used for catalog matching and distributor lookup.

N-Channel 30V 13A (Ta), 50A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount TO-252AA

13A, 30V, 0.008ohm, N-Channel Power MOSFET, TO-252

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204096-FDD6696
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 5V
Max Input Capacitance: 1715pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited