P-Channel 30V 11A (Ta), 40A (Tc) 52W (Ta) Surface Mount TO-252AA
P-Channel 30V 11A (Ta), 40A (Tc) 52W (Ta) Surface Mount TO-252AA
P-Channel 30V 11A (Ta), 40A (Tc) 52W (Ta) Surface Mount TO-252AA
MOSFET P-CH 30V 11A/40A TO252
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 131865-FDD6685
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 52W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 5V
Max Input Capacitance: 1715pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 20 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
Power Field-Effect Transistor, 11A, 30V, 0.02ohm, P-Channel, MOSFET, TO-252
MOSFET, P CHANNEL, -30V, -40A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 40A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
MOSFET P-CH 30V 11A/40A TO252
30V 20mΩ@10V,11A 52W 3V@250uA P Channel TO-252(DPAK) MOSFETs ROHS
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD6685TR-ND | FDD6685 | 131865-FDD6685 | 8090916 | 8090916P | FDD6685 | 29X6686 | FDD6685 | FDD6685 | FDD6685 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6685 | MOSFETs | MOSFETs | Mosfet, P Channel, -30V, -40A, To-252-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | DPAK-JDEC | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||
| IDSS | 11000 milliamps | 40000 milliamps |
