onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6676AS FDD6676AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204095-FDD6676AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204095-FDD6676AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6676AS - 204095-FDD6676AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6676AS
204095-FDD6676AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6676AS 204095-FDD6676AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204095-FDD6676AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204095-FDD6676AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 90A TO252 MOSFET Transistor
278-FDD6676AS
30V 90A TO252 MOSFET Transistor 278-FDD6676AS
MOSFET N-CH 30V 90A TO252 Product overview: FDD6676AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6676AS can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 90A TO252 Product overview: FDD6676AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6676AS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDD6676AS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6676AS-ND
Single FETs, MOSFETs FDD6676AS-ND
N-Channel 30V 90A (Ta) 70W (Ta) Surface Mount TO-252AA

N-Channel 30V 90A (Ta) 70W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
 - FDD6676AS - Rochester Electronics
Newburyport, MA, United States
90A, 30V, 0.0057ohm, N-Channel Power MOSFET, TO-252

90A, 30V, 0.0057ohm, N-Channel Power MOSFET, TO-252

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6676AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6676AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6676AS
MOSFET N-CH 30V 90A TO252

MOSFET N-CH 30V 90A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors
Product Number 204095-FDD6676AS 278-FDD6676AS FDD6676AS-ND FDD6676AS FDD6676AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6676AS 30V 90A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 70000 milliwatts 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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