onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AS FDD6670AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128196-FDD6670AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 76A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1580pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 13.8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AS - 128196-FDD6670AS - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD6670ASTR-ND - DigiKey
    DigiKey
  • FDD6670AS - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6670AS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128196-FDD6670AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 76A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1580pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 13.8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AS - 128196-FDD6670AS - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AS
128196-FDD6670AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AS 128196-FDD6670AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128196-FDD6670AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 76A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1580pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 13.8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 128196-FDD6670AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 76A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1580pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDD6670ASTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6670ASTR-ND
Single FETs, MOSFETs FDD6670ASTR-ND
N-Channel 30V 76A (Ta) 70W (Ta) Surface Mount TO-252AA

N-Channel 30V 76A (Ta) 70W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
- FDD6670AS - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDD6670AS
FDD6670AS
76A, 30V, 0.008ohm, N-Channel Power MOSFET, TO-252

76A, 30V, 0.008ohm, N-Channel Power MOSFET, TO-252

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6670AS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6670AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6670AS
MOSFET N-CH 30V 76A TO252

MOSFET N-CH 30V 76A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors
Product Number 128196-FDD6670AS FDD6670ASTR-ND FDD6670AS FDD6670AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AS Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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