onsemi Single FETs, MOSFETs FDD6670AL

Description
N-Channel 30V 84A (Ta) 83W (Ta) Surface Mount TO-252AA
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Description
N-Channel 30V 84A (Ta) 83W (Ta) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDD6670AL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD6670AL-ND
Single FETs, MOSFETs FDD6670AL-ND
N-Channel 30V 84A (Ta) 83W (Ta) Surface Mount TO-252AA

N-Channel 30V 84A (Ta) 83W (Ta) Surface Mount TO-252AA

Buy Now Datasheet
 - FDD6670AL - Rochester Electronics
Newburyport, MA, United States
84A, 30V, 0.005ohm, N-Channel Power MOSFET, TO-252

84A, 30V, 0.005ohm, N-Channel Power MOSFET, TO-252

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AL - 066932-FDD6670AL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AL
066932-FDD6670AL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AL 066932-FDD6670AL
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066932-FDD6670AL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 84A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 56nC @ 5V Max Input Capacitance: 3845pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066932-FDD6670AL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 84A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 56nC @ 5V
Max Input Capacitance: 3845pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD6670AL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD6670AL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD6670AL
MOSFET N-CH 30V 84A D-PAK

MOSFET N-CH 30V 84A D-PAK

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD6670AL-ND FDD6670AL 066932-FDD6670AL FDD6670AL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6670AL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252 SOT3; TO-252 (DPAK); D-PAK (TO-252AA) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
rDS(on) 0.0050 ohms
V(BR)DSS 30 volts
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