MOSFET P-CH 35V 13A/55A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038088-FDD6637
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 13A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2370pF @ 20V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 11.6 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
P-Channel 35V 13A (Ta), 55A (Tc) 3.1W (Ta), 57W (Tc) Surface Mount TO-252AA
P-Channel 35V 13A (Ta), 55A (Tc) 3.1W (Ta), 57W (Tc) Surface Mount TO-252AA
P-Channel 35V 13A (Ta), 55A (Tc) 3.1W (Ta), 57W (Tc) Surface Mount TO-252AA
MOSFET P-CH 35V 13A/55A DPAK
TRANSISTOR, MOSFET, P CHANNEL, -13 A, -35 V, 9.7 MOHM, -10 V, -1.6 V, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
P CHANNEL MOSFET, -35V, 13A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V RoHS Compliant: Yes
P CHANNEL POWERTRENCH MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
MOSFET 35V PCH PowerTrench MOSFET
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD6637 | 1038088-FDD6637 | 7599093P | 7599093 | FDD6637TR-ND | FDD6637 | 16114662 | 75M2457 | 31Y1360 | FDD6637 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6637 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | P Channel Mosfet, -35V, 13A, To-252; Channel Type Onsemi | Mosfet Transistor, P Channel, -13 A, -35 V, 9.7 Mohm, -10 V, -1.6 V Rohs Compliant Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 35 volts | 35 volts | ||||||||
| IDSS | 13000 milliamps | 13000 milliamps | ||||||||
| PD | 3100 milliwatts | 3100 to 57000 milliwatts |
