onsemi Single FETs, MOSFETs FDD6635

Power Field-Effect Transistor, 15A, 35V, 0.01ohm, N-Channel, MOSFET, TO-252

N-Channel 35V 15A (Ta), 59A (Tc) 3.8W (Ta), 55W (Tc) Surface Mount TO-252AA

N-Ch MOSFET, 35V, 59A, 10mR, TO-252, SMT Product overview: FDD6635 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 35V, 59A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 35V, 59A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD6635 can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 127494-FDD6635
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 15A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1400pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500