Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066928-FDD6512A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.7A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1082pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 21 mOhm @ 10.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
10.7A, 20V, 0.021ohm, N-Channel Power MOSFET, TO-252
N-Channel 20V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Surface Mount TO-252AA
MOSFET N-CH 20V 10.7A/36A DPAK
| Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors |
| Product Number | 066928-FDD6512A | FDD6512A | FDD6512A-ND | FDD6512A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6512A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | |||
| PD | 3800 to 43000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) |
