N-Channel UniFET FRFET MOSFET in a D-PAK package, rated for 500 V drain-to-source voltage and 3.5 A continuous drain current at 25°C. It features a typical on-resistance of 1.25 Ω at 10 V gate voltage, a total gate charge of 11 nC, and a reverse recovery time of 65 ns for the body diode. The device is RoHS compliant and rated for operation from -55°C to +150°C with a maximum junction-to-case thermal resistance of 1.4 °C/W.
Power Field-Effect Transistor, N-Channel, MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | FDD5N50FTMWS |
| Polarity | N-Channel |