onsemi FDD5N50FTMWS

Description
Power Field-Effect Transistor, N-Channel, MOSFET
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Description
Power Field-Effect Transistor, N-Channel, MOSFET
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Datasheet
Datasheet Summary
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N-Channel UniFET FRFET MOSFET in a D-PAK package, rated for 500 V drain-to-source voltage and 3.5 A continuous drain current at 25°C. It features a typical on-resistance of 1.25 Ω at 10 V gate voltage, a total gate charge of 11 nC, and a reverse recovery time of 65 ns for the body diode. The device is RoHS compliant and rated for operation from -55°C to +150°C with a maximum junction-to-case thermal resistance of 1.4 °C/W.

Datasheet Summary
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N-Channel UniFET FRFET MOSFET in a D-PAK package, rated for 500 V drain-to-source voltage and 3.5 A continuous drain current at 25°C. It features a typical on-resistance of 1.25 Ω at 10 V gate voltage, a total gate charge of 11 nC, and a reverse recovery time of 65 ns for the body diode. The device is RoHS compliant and rated for operation from -55°C to +150°C with a maximum junction-to-case thermal resistance of 1.4 °C/W.

Suppliers

Company
Product
Description
Supplier Links
 - FDD5N50FTMWS - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, N-Channel, MOSFET

Power Field-Effect Transistor, N-Channel, MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number FDD5N50FTMWS
Polarity N-Channel
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