onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5614P FDD5614P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066925-FDD5614P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Family Name: FDD5614P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 759pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): TSM680P06CZ C0G; ZXMP6A17K; TSM680P06CP ROG; Introduction Date: February 06, 2001 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5614P - 066925-FDD5614P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDD5614PTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDD5614P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • P Channel Mosfet, 60V, 15A, To-252; Channel Type Onsemi - 82C2455 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, Full Reel; Transistor Polarity Onsemi - 67R2046 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD5614P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066925-FDD5614P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Family Name: FDD5614P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 759pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): TSM680P06CZ C0G; ZXMP6A17K; TSM680P06CP ROG; Introduction Date: February 06, 2001 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5614P - 066925-FDD5614P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5614P
066925-FDD5614P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5614P 066925-FDD5614P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066925-FDD5614P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Family Name: FDD5614P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 759pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): TSM680P06CZ C0G; ZXMP6A17K; TSM680P06CP ROG; Introduction Date: February 06, 2001 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066925-FDD5614P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Family Name: FDD5614P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 759pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): TSM680P06CZ C0G; ZXMP6A17K; TSM680P06CP ROG;
Introduction Date: February 06, 2001
ECCN: EAR99
Country of Origin: Israel, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD5614PTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD5614PTR-ND
Single FETs, MOSFETs FDD5614PTR-ND
P-Channel 60V 15A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252AA

P-Channel 60V 15A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD5614P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDD5614P
Single FETs, MOSFETs FDD5614P
MOSFET P-CH 60V 15A TO252

MOSFET P-CH 60V 15A TO252

Supplier's Site Datasheet
P Channel Mosfet, 60V, 15A, To-252; Channel Type Onsemi - 82C2455 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, 60V, 15A, To-252; Channel Type Onsemi
82C2455
P Channel Mosfet, 60V, 15A, To-252; Channel Type Onsemi 82C2455
P CHANNEL MOSFET, 60V, 15A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

P CHANNEL MOSFET, 60V, 15A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, Full Reel; Transistor Polarity Onsemi - 67R2046 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, Full Reel; Transistor Polarity Onsemi
67R2046
Mosfet Transistor, Full Reel; Transistor Polarity Onsemi 67R2046
MOSFET Transistor, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET Transistor, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDD5614P
MOSFET FDD5614P
MOSFET 60V P-Ch PowerTrench

MOSFET 60V P-Ch PowerTrench

Buy Now Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDD5614P
Triode/MOS Tube/Transistor >> MOSFETs FDD5614P
TO-252-2 MOSFETs ROHS

TO-252-2 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD5614P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD5614P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD5614P
MOSFET P-CH 60V 15A TO252

MOSFET P-CH 60V 15A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066925-FDD5614P FDD5614PTR-ND FDD5614P 82C2455 67R2046 FDD5614P FDD5614P FDD5614P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5614P Single FETs, MOSFETs Single FETs, MOSFETs P Channel Mosfet, 60V, 15A, To-252; Channel Type Onsemi Mosfet Transistor, Full Reel; Transistor Polarity Onsemi MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 3800 to 42000 milliwatts 3800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-3 TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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