600V N-Channel Power MOSFET, 3.4A, 1.9Ω, DPAK Product overview: FDD4N60NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD4N60NZ can be used for catalog matching and distributor lookup.
N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount TO-252AA
FDD4N60NZ - Power Field-Effect Transistor, 3.4A, 600V, 2.5ohm, N-Channel, MOSFET, TO-252AA
FDD4N60NZ - Power Field-Effect Transistor, 3.4A, 600V, 2.5ohm, N-Channel, MOSFET, TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173759-FDD4N60NZ
Series: UniFET-II
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Family Name: FDD4N60NZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-252, (D-Pak)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 510pF @ 25V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 114W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.5 Ohm @ 1.7A, 10V
Alternative Parts (Cross-Reference): TSM4N60CP RO; AOD4T60; AOD2HC60;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET 2.5A Output Current GateDrive Optocopler
MOSFET, N-CH, 600V, 3.4A, 150DEG C, 114W ROHS COMPLIANT: YES
MOSFET N-CH 600V 3.4A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDD4N60NZ | FDD4N60NZTR-ND | FDD4N60NZ | 1173759-FDD4N60NZ | FDD4N60NZ | 54AH8623 | FDD4N60NZ |
| Product Name | N-Channel 600V 3.4A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD4N60NZ | MOSFET | Mosfet, N-Ch, 600V, 3.4A, 150Deg C, 114W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| PD | 114000 milliwatts | 114000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
