MOSFET N-CH 100V 34A TO252
MOSFETs 100V NCh PowerTrench Product overview: FDD3670 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD3670 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 34A, 100V, 0.032ohm, N-Channel, MOSFET, TO-252
N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252AA
N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252AA
N-Channel 100V 34A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 139944-FDD3670
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 34A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2490pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET, N-CH, 100V, 34A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:34A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 34A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:34A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:83W RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 100V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 34A TO252
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD3670 | 2088-FDD3670 | FDD3670 | FDD3670TR-ND | 139944-FDD3670 | 31Y1354 | 58K1433 | 16119958 | FDD3670 | FDD3670 |
| Product Name | Single FETs, MOSFETs | 100V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3670 | Mosfet, N-Ch, 100V, 34A, To-252-3; Channel Type Onsemi | N Channel Mosfet, 100V, 34A, To-252, Full Reel; Channel Type Onsemi | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||||
| IDSS | 34000 milliamps | 34000 milliamps | 34000 milliamps | |||||||
| PD | 3800 milliwatts | 3.8 milliwatts | 3800 to 83000 milliwatts | 83000 milliwatts |
