onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD3570 FDD3570

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038060-FDD3570
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.4W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 2800pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

N-Channel 80V 10A (Ta) 3.4W (Ta), 69W (Tc) Surface Mount TO-252AA

MOSFET N-CH 80V 10A D-PAK Product overview: FDD3570 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD3570 can be used for catalog matching and distributor lookup.