onsemi Single FETs, MOSFETs FDD10N20LZTM

MOSFET N-CH 200V 7.6A DPAK

N-Channel Power MOSFET, 200V, 7.6A, 360mΩ, DPAK, Logic Level Product overview: FDD10N20LZTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 7.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 7.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD10N20LZTM can be used for catalog matching and distributor lookup.

N-Channel 200V 7.6A (Tc) 83W (Tc) Surface Mount TO-252AA

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 129200-FDD10N20LZTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 585pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 360 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500