onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P FDC699P

Description
7A, 20V, 0.022ohm, P-Channel Power MOSFET
Request a Quote Datasheet
Description
7A, 20V, 0.022ohm, P-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDC699P - Rochester Electronics
Newburyport, MA, United States
7A, 20V, 0.022ohm, P-Channel Power MOSFET

7A, 20V, 0.022ohm, P-Channel Power MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P - 119519-FDC699P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P
119519-FDC699P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P 119519-FDC699P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 119519-FDC699P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 FLMP Dimension: 6-SSOT Flat-lead, SuperSOT-6 FLMP Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 38nC @ 5V Max Input Capacitance: 2640pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 22 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 119519-FDC699P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6 FLMP
Dimension: 6-SSOT Flat-lead, SuperSOT-6 FLMP
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 38nC @ 5V
Max Input Capacitance: 2640pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET P-CH 20V 7A SSOT-6 - 598-FDC699P - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 7A SSOT-6
598-FDC699P
MOSFET P-CH 20V 7A SSOT-6 598-FDC699P
MOSFET P-CH 20V 7A SSOT-6

MOSFET P-CH 20V 7A SSOT-6

Supplier's Site
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC699P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC699P
MOSFET P-CH 20V 7A SUPERSOT6

MOSFET P-CH 20V 7A SUPERSOT6

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDC699P 119519-FDC699P 598-FDC699P FDC699P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P MOSFET P-CH 20V 7A SSOT-6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
rDS(on) 0.0220 ohms
Package Type SUPERSOT-6 SOT3; SuperSOT-6 FLMP 6-SSOT Flat-lead, SuperSOTTM-6 FLMP
V(BR)DSS 20 volts
Unlock Full Specs
to access all available technical data