onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P FDC699P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 119519-FDC699P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 FLMP Dimension: 6-SSOT Flat-lead, SuperSOT-6 FLMP Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 38nC @ 5V Max Input Capacitance: 2640pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 22 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 119519-FDC699P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 FLMP Dimension: 6-SSOT Flat-lead, SuperSOT-6 FLMP Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 38nC @ 5V Max Input Capacitance: 2640pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 22 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P - 119519-FDC699P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P
119519-FDC699P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P 119519-FDC699P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 119519-FDC699P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 FLMP Dimension: 6-SSOT Flat-lead, SuperSOT-6 FLMP Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 38nC @ 5V Max Input Capacitance: 2640pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 22 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 119519-FDC699P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6 FLMP
Dimension: 6-SSOT Flat-lead, SuperSOT-6 FLMP
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 38nC @ 5V
Max Input Capacitance: 2640pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - FDC699P - Rochester Electronics
Newburyport, MA, United States
7A, 20V, 0.022ohm, P-Channel Power MOSFET

7A, 20V, 0.022ohm, P-Channel Power MOSFET

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC699P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC699P
MOSFET P-CH 20V 7A SUPERSOT6

MOSFET P-CH 20V 7A SUPERSOT6

Supplier's Site
MOSFET P-CH 20V 7A SSOT-6 - 598-FDC699P - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 7A SSOT-6
598-FDC699P
MOSFET P-CH 20V 7A SSOT-6 598-FDC699P
MOSFET P-CH 20V 7A SSOT-6

MOSFET P-CH 20V 7A SSOT-6

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 119519-FDC699P FDC699P FDC699P 598-FDC699P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC699P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 20V 7A SSOT-6
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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