onsemi FET, MOSFET Arrays FDC6327C-F169

The FDC6327C is a dual N- and P-channel MOSFET in a SUPERSOT-6 package, designed for compact DC/DC converters, load switching, and motor driving applications. It features a 20 V drain-source voltage rating for the N-channel and -20 V for the P-channel, with on-state resistance of 0.08 Ω at 4.5 V gate bias for the N-channel and 0.17 Ω at -4.5 V for the P-channel. The device supports continuous drain currents of 2.7 A and -1.6 A, respectively, and dissipates up to 0.96 W with adequate PCB thermal management. The package measures 1 mm in height and has a footprint 72% smaller than SO-8. Thermal resistance from junction to ambient is 130 °C/W when mounted on a 0.125 in² 2 oz copper pad. The device is Pb-free and operates from -55 °C to +150 °C.