Nexperia B.V. 60 V, 300 mA N-channel Trench MOSFET 2N7002/HAMR

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

Features and benefits

• Suitable for logic level gate drive sources
• Very fast switching
• Surface-mounted package
• Trench MOSFET technology

Applications

• Logic level translators
• High-speed line drivers

MOSFET N-CH 60V 300MA TO236AB

MOSFET N-CH 60V 300MA TO236AB Product overview: 2N7002/HAMR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 300MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 300MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002/HAMR can be used for catalog matching and distributor lookup.

Win Source Part Number: 958338-2N7002/HAMR
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 830mW (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Vgs (Max): ±30V
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): 2N7002/HAMR2N7002HAMR;
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-8645-1,934660832215,1727-8645-2,1727-8645-6
Base Product Number: 2N7002
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB

N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB

N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB