N-Channel 100V 2.6A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 100V 2.6A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 100V 2.6A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001119-FDC3612
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC3612
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 660pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): DMN10H170SVT-13; DMN10H170SVT-7; BSL372SNH6327XTSA1; ZXMN10B08E6TA;
Introduction Date: March 09, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 100V 2.6A SUPERSOT6
N CHANNEL MOSFET, 100V, 2.6A SUPER SOT-6; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.6 A, 100 V, 125 mohm, 10 V, 2.3 V RoHS Compliant: Yes
MOSFET N-CH 100V 2.6A SUPERSOT6
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC3612TR-ND | 001119-FDC3612 | FDC3612 | 34C0106 | 47T5013 | FDC3612 | FDC3612 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3612 | Single FETs, MOSFETs | N Channel Mosfet, 100V, 2.6A Super Sot-6; Channel Type Onsemi | Mosfet Transistor, N Channel, 2.6 A, 100 V, 125 Mohm, 10 V, 2.3 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | |
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 1600 milliwatts | 1600 milliwatts |
