MOSFET N-CH 80V 3A SUPERSOT6
N-Channel 80V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 80V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
N-Channel 80V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFETs 80V N-Ch PowerTrench Product overview: FDC3512 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDC3512 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038011-FDC3512
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 634pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
MOSFET N-Channel 80V 3A SuperSOT6
N CHANNEL MOSFET, 80V, 3A, SUPER SOT-6; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET, N CHANNEL, 80V, 3A, SUPERSOT-6; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDC3512 | FDC3512TR-ND | 2088-FDC3512 | 1038011-FDC3512 | 7599011 | 7599011P | FDC3512 | 82C2440 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 80V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC3512 | MOSFETs | MOSFETs | MOSFET | N Channel Mosfet, 80V, 3A, Super Sot-6; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| IDSS | 3000 milliamps | 3000 milliamps | ||||||
| PD | 1600 milliwatts | 1.6 milliwatts | 1600 milliwatts |