onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512 FDC2512

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040254-FDC2512 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC2512 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 344pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 425 mOhm @ 1.4A, 10V Alternative Parts (Cross-Reference): TSM4800N15CX6RFG; Si3440DV-T1; Si3440DV-T1-E3; Introduction Date: June 15, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512 - 040254-FDC2512 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDC2512TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDC2512 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • N Channel Mosfet, 150V, 1.4A Super Sot-6; Transistor Polarity Onsemi - 82C2438 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, Full Reel; Channel Type Onsemi - 67R2025 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC2512 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040254-FDC2512 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC2512 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 344pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 425 mOhm @ 1.4A, 10V Alternative Parts (Cross-Reference): TSM4800N15CX6RFG; Si3440DV-T1; Si3440DV-T1-E3; Introduction Date: June 15, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512 - 040254-FDC2512 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512
040254-FDC2512
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512 040254-FDC2512
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040254-FDC2512 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: FDC2512 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 344pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 425 mOhm @ 1.4A, 10V Alternative Parts (Cross-Reference): TSM4800N15CX6RFG; Si3440DV-T1; Si3440DV-T1-E3; Introduction Date: June 15, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040254-FDC2512
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC2512
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 344pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 425 mOhm @ 1.4A, 10V
Alternative Parts (Cross-Reference): TSM4800N15CX6RFG; Si3440DV-T1; Si3440DV-T1-E3;
Introduction Date: June 15, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDC2512TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDC2512TR-ND
Single FETs, MOSFETs FDC2512TR-ND
N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - FDC2512 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDC2512
Single FETs, MOSFETs FDC2512
N-CHANNEL POWERTRENCH MOSFET 150

N-CHANNEL POWERTRENCH MOSFET 150

Supplier's Site Datasheet
N Channel Mosfet, 150V, 1.4A Super Sot-6; Transistor Polarity Onsemi - 82C2438 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 1.4A Super Sot-6; Transistor Polarity Onsemi
82C2438
N Channel Mosfet, 150V, 1.4A Super Sot-6; Transistor Polarity Onsemi 82C2438
N CHANNEL MOSFET, 150V, 1.4A SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; On Resistance Rds(on):0.319ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 1.4A SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; On Resistance Rds(on):0.319ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes

Supplier's Site
Mosfet, Full Reel; Channel Type Onsemi - 67R2025 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
67R2025
Mosfet, Full Reel; Channel Type Onsemi 67R2025
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V; Power Dissipation:1.6W RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V; Power Dissipation:1.6W RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDC2512
MOSFET FDC2512
MOSFET 150V NCh PowerTrench

MOSFET 150V NCh PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDC2512 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDC2512
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDC2512
MOSFET N-CH 150V 1.4A SUPERSOT6

MOSFET N-CH 150V 1.4A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 040254-FDC2512 FDC2512TR-ND FDC2512 82C2438 67R2025 FDC2512 FDC2512
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512 Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 150V, 1.4A Super Sot-6; Transistor Polarity Onsemi Mosfet, Full Reel; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts 150 volts
PD 1600 milliwatts 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
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