N-Ch MOSFET 150V 1.4A 425mR SOT-23-6 SMD Product overview: FDC2512 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 1.4A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 1.4A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDC2512 can be used for catalog matching and distributor lookup.
N-CHANNEL POWERTRENCH MOSFET 150
N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040254-FDC2512
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: FDC2512
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 344pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 425 mOhm @ 1.4A, 10V
Alternative Parts (Cross-Reference): TSM4800N15CX6RFG; Si3440DV-T1; Si3440DV-T1-E3;
Introduction Date: June 15, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
MOSFET N-CH 150V 1.4A SUPERSOT6
N CHANNEL MOSFET, 150V, 1.4A SUPER SOT-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; On Resistance Rds(on):0.319ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V; Power Dissipation:1.6W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDC2512 | FDC2512 | FDC2512TR-ND | 040254-FDC2512 | FDC2512 | FDC2512 | 82C2438 | 67R2025 |
| Product Name | SMD 150V 1.4A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC2512 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 150V, 1.4A Super Sot-6; Transistor Polarity Onsemi | Mosfet, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 150 volts | 150 volts |
