N-Channel 100V 210A (Tc) 3.5W (Ta), 300W (Tc) Surface Mount 8-HPSOF
N-Channel 100V 210A (Tc) 3.5W (Ta), 300W (Tc) Surface Mount 8-HPSOF
N-Channel 100V 210A (Tc) 3.5W (Ta), 300W (Tc) Surface Mount 8-HPSOF
MOSFETs N-Channel Power Trench MOSFET Product overview: FDBL0240N100 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDBL0240N100 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 210A 8HPSOF
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 763564-FDBL0240N100
Series: PowerTrench
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 8-PowerSFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Family Name: FDBL0240N100
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 8-PSOF
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 111nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8755pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.5W (Ta), 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 2k pcs
MOSFET, N-CH, 100V, 210A, 175DEG C, 300W ROHS COMPLIANT: YES
MOSFET N-CH 100V 210A 8HPSOF
MOSFET N-Channel Power Trench MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDBL0240N100TR-ND | 2088-FDBL0240N100 | FDBL0240N100 | 763564-FDBL0240N100 | 54AH8613 | FDBL0240N100 | FDBL0240N100 |
| Product Name | Single FETs, MOSFETs | N-Channel MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDBL0240N100 | Mosfet, N-Ch, 100V, 210A, 175Deg C, 300W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerSFN | Reel | 8-PowerSFN | SOT3 | TO-3 | 10V | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.1620 kS | ||||||
| PD | 300 milliwatts | 3500 milliwatts | 3500 to 300000 milliwatts |