onsemi Single FETs, MOSFETs FDB8874

Description
N-Channel 30V 21A (Ta), 121A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 30V 21A (Ta), 121A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDB8874-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8874-ND
Single FETs, MOSFETs FDB8874-ND
N-Channel 30V 21A (Ta), 121A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 21A (Ta), 121A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8874 - 066915-FDB8874 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8874
066915-FDB8874
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8874 066915-FDB8874
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066915-FDB8874 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta), 121A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 3130pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066915-FDB8874
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta), 121A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 3130pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8874 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8874
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8874
MOSFET N-CH 30V 21A/121A TO263AB

MOSFET N-CH 30V 21A/121A TO263AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB8874-ND 066915-FDB8874 FDB8874
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8874 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 30 volts
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