onsemi N-Channel 40V MOSFET Transistor FDB8453LZ

40V N-Channel PowerTrench® MOSFET, TO-263 2L (D2PAK), 800-TAPE REEL Product overview: FDB8453LZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8453LZ can be used for catalog matching and distributor lookup.

N-Channel 40V 16.1A (Ta), 50A (Tc) 3.1W (Ta), 66W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001109-FDB8453LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 66W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 16.1A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 3545pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 17.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 800

50A, 40V, N-Channel Power MOSFET, TO-263AB