onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444TS FDB8444TS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037987-FDB8444TS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 181W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263-5 Dimension: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Ta), 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 338nC @ 20V Max Input Capacitance: 8410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037987-FDB8444TS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 181W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263-5 Dimension: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Ta), 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 338nC @ 20V Max Input Capacitance: 8410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444TS - 1037987-FDB8444TS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444TS
1037987-FDB8444TS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444TS 1037987-FDB8444TS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037987-FDB8444TS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 181W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263-5 Dimension: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Ta), 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 338nC @ 20V Max Input Capacitance: 8410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037987-FDB8444TS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 181W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263-5
Dimension: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 20A (Ta), 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 338nC @ 20V
Max Input Capacitance: 8410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 70A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FDB8444TS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8444TS-ND
Single FETs, MOSFETs FDB8444TS-ND
N-Channel 40V 20A (Ta), 70A (Tc) 181W (Tc) Surface Mount TO-263-5

N-Channel 40V 20A (Ta), 70A (Tc) 181W (Tc) Surface Mount TO-263-5

Buy Now Datasheet
 - FDB8444TS - Rochester Electronics
Newburyport, MA, United States
20A, 40V, N-Channel Power MOSFET, TO-263AA

20A, 40V, N-Channel Power MOSFET, TO-263AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8444TS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8444TS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8444TS
MOSFET N-CH 40V 20A/70A TO263-5

MOSFET N-CH 40V 20A/70A TO263-5

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors
Product Number 1037987-FDB8444TS FDB8444TS-ND FDB8444TS FDB8444TS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444TS Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 181000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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