onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444 FDB8444

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037985-FDB8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 128nC @ 10V Max Input Capacitance: 8035pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037985-FDB8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 128nC @ 10V Max Input Capacitance: 8035pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444 - 1037985-FDB8444 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444
1037985-FDB8444
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444 1037985-FDB8444
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037985-FDB8444 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 128nC @ 10V Max Input Capacitance: 8035pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037985-FDB8444
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 128nC @ 10V
Max Input Capacitance: 8035pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 70A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB8444CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8444CT-ND
Single FETs, MOSFETs FDB8444CT-ND
N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB8444TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB8444TR-ND
Single FETs, MOSFETs FDB8444TR-ND
N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
 - FDB8444 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 70A, 40V, 9.9ohm, N-Channel, MOSFET, TO-263AB

Power Field-Effect Transistor, 70A, 40V, 9.9ohm, N-Channel, MOSFET, TO-263AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB8444 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB8444
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB8444
MOSFET N-CH 40V 70A TO263AB

MOSFET N-CH 40V 70A TO263AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDB8444
MOSFET FDB8444
MOSFET 40V N-Channel PowerTrench MOSFET

MOSFET 40V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037985-FDB8444 FDB8444CT-ND FDB8444 FDB8444 FDB8444
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8444 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 167000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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