onsemi N-Channel SMD 40V 70A MOSFET Transistor FDB8444

Power Field-Effect Transistor, 70A, 40V, 9.9ohm, N-Channel, MOSFET, TO-263AB

N-Channel MOSFET, 40V, 70A, 5.5mΩ, TO-263-3, Surface Mount Product overview: FDB8444 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 70A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 70A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB8444 can be used for catalog matching and distributor lookup.

N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037985-FDB8444
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 128nC @ 10V
Max Input Capacitance: 8035pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 70A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 800