onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8030L FDB8030L

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001104-FDB8030L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 187W (Tc)
Family Name: FDB8030L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 170nC @ 5V
Max Input Capacitance: 10500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): STB230NH03L; BUK761R8-30C,118; AP2R803GS-HF;
Introduction Date: January 28, 2000
ECCN: EAR99
Country of Origin: Philippines
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 800

N-Channel 30V 80A (Ta) 187W (Tc) Surface Mount D²PAK (TO-263)