onsemi Single FETs, MOSFETs FDB6670AL

N-Channel 30V 80A (Ta) 68W (Tc) Surface Mount D²PAK (TO-263)

30V N-Channel MOSFET, 80A, 6.5mR, TO-263, Tape & Reel Product overview: FDB6670AL from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6670AL can be used for catalog matching and distributor lookup.

80A, 30V, N-Channel Power MOSFET, TO-263AB

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204090-FDB6670AL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 33nC @ 5V
Max Input Capacitance: 2440pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 800