onsemi Single FETs, MOSFETs FDB6030L

Description
N-Channel 30V 48A (Ta) 52W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 30V 48A (Ta) 52W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB6030L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB6030L-ND
Single FETs, MOSFETs FDB6030L-ND
N-Channel 30V 48A (Ta) 52W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 48A (Ta) 52W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030L - 066912-FDB6030L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030L
066912-FDB6030L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030L 066912-FDB6030L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066912-FDB6030L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 1250pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066912-FDB6030L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 48A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 1250pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
 - FDB6030L - Rochester Electronics
Newburyport, MA, United States
52A, 30V, N-Channel Power MOSFET, TO-263AB

52A, 30V, N-Channel Power MOSFET, TO-263AB

Supplier's Site Datasheet
Singapore
30V 48A MOSFET Transistor
278-FDB6030L
30V 48A MOSFET Transistor 278-FDB6030L
MOSFET N-CH 30V 48A TO263AB Product overview: FDB6030L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6030L can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 48A TO263AB Product overview: FDB6030L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6030L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB6030L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB6030L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB6030L
MOSFET N-CH 30V 48A TO263AB

MOSFET N-CH 30V 48A TO263AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB6030L-ND 066912-FDB6030L FDB6030L 278-FDB6030L FDB6030L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030L 30V 48A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263AB Bulk TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 30 volts
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