onsemi Single FETs, MOSFETs FDB6030BL

Description
N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDB6030BL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB6030BL-ND
Single FETs, MOSFETs FDB6030BL-ND
N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL - 066911-FDB6030BL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL
066911-FDB6030BL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL 066911-FDB6030BL
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066911-FDB6030BL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1160pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066911-FDB6030BL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1160pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB6030BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB6030BL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB6030BL
MOSFET N-CH 30V 40A R-6

MOSFET N-CH 30V 40A R-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB6030BL-ND 066911-FDB6030BL FDB6030BL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 30 volts
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