onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL FDB6030BL

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066911-FDB6030BL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1160pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066911-FDB6030BL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1160pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL - 066911-FDB6030BL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL
066911-FDB6030BL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL 066911-FDB6030BL
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066911-FDB6030BL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1160pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066911-FDB6030BL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1160pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Singapore
30V 40A 60W MOSFET Transistor
278-FDB6030BL
30V 40A 60W MOSFET Transistor 278-FDB6030BL
30V 40A N-CH MOSFET, 18mR Rds On, 60W, SMT Product overview: FDB6030BL from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A, 60W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, 60W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6030BL can be used for catalog matching and distributor lookup.

30V 40A N-CH MOSFET, 18mR Rds On, 60W, SMT Product overview: FDB6030BL from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A, 60W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, 60W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDB6030BL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB6030BL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB6030BL-ND
Single FETs, MOSFETs FDB6030BL-ND
N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB6030BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB6030BL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB6030BL
MOSFET N-CH 30V 40A R-6

MOSFET N-CH 30V 40A R-6

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 066911-FDB6030BL 278-FDB6030BL FDB6030BL-ND FDB6030BL
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB6030BL 30V 40A 60W MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 60000 milliwatts 60000 milliwatts
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