Power Field-Effect Transistor, 8A, 150V, 0.016ohm, N-Channel, MOSFET, TO-263AB
MOSFETs 150V N-Channel QFET Trench Product overview: FDB2532 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB2532 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001088-FDB2532
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: FDB2532
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 79A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 5870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): FDB2532-F085; IRFS4228TRLPBF; IRFS4228; SQM85N15-19_GE3;
Introduction Date: June 20, 2002
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 800
MOSFET N-CH 150V 8A/79A D2PAK
POWER FIELD-EFFECT TRANSISTOR, 8
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 150V N-Channel QFET Trench
MOSFET N-CH 150V 8A/79A D2PAK
N CHANNEL MOSFET, 150V, 79A, TO-263AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:79A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:79A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:310W RoHS Compliant: Yes
MOSFET Transistor, N Channel, 33 A, 150 V, 0.014 ohm, 10 V, 4 V RoHS Compliant: Yes
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDB2532 | 2088-FDB2532 | 001088-FDB2532 | 7598951 | 7598951P | FDB2532 | FDB2532DKR-ND | FDB2532 | FDB2532 | 28H9658 | 67R2023 | 61M6190 |
| Product Name | N-Channel 150V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB2532 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 150V, 79A, To-263Ab; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | Mosfet Transistor, N Channel, 33 A, 150 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant Onsemi | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| rDS(on) | 0.0160 ohms | |||||||||||
| Package Type | TO-263; TO-263AB | Reel | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-3 | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||||
| MOSFET Operating Mode | Enhancement | Enhancement |
