Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037964-FDB20N50F
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 3390pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 260 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): STB16NM50N; R5011ANJTLL; R5011ANJTL; FDB20N50F;
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs N-Channel UniFETTM FRFET MOSFET 500V, Product overview: FDB20N50F from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB20N50F can be used for catalog matching and distributor lookup.
N-Channel 500V 20A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 20A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 20A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 500V 20A D2PAK
MOSFET, N-CH, 20A, 500V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 500V 20A D2PAK
| Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1037964-FDB20N50F | FDB20N50F | 2088-FDB20N50F | FDB20N50FDKR-ND | FDB20N50F | FDB20N50F | 07AH3891 | FDB20N50F |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB20N50F | N-Channel 500V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20A, 500V, To-263; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | ||||||
| PD | 250000 milliwatts | 250 milliwatts | 250000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | D2PAK | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
